Formation of Ideal Rashba States on Layered Semiconductor Surfaces Steered by Strain Engineering

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Formation of Ideal Rashba States on Layered Semiconductor Surfaces Steered by Strain Engineering.

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ژورنال

عنوان ژورنال: Nano Letters

سال: 2015

ISSN: 1530-6984,1530-6992

DOI: 10.1021/acs.nanolett.5b04005